WO2014015337A3 - Gallium nitride vertical cavity laser fabrication method - Google Patents

Gallium nitride vertical cavity laser fabrication method Download PDF

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Publication number
WO2014015337A3
WO2014015337A3 PCT/US2013/051498 US2013051498W WO2014015337A3 WO 2014015337 A3 WO2014015337 A3 WO 2014015337A3 US 2013051498 W US2013051498 W US 2013051498W WO 2014015337 A3 WO2014015337 A3 WO 2014015337A3
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WO
WIPO (PCT)
Prior art keywords
vertical cavity
gallium nitride
fabrication method
cavity laser
laser fabrication
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PCT/US2013/051498
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French (fr)
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WO2014015337A2 (en
Inventor
Casey O. HOLDER
Daniel F. Feezell
Steven P. Denbaars
James S. Speck
Shuji Nakamura
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The Regents Of The University Of California
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Publication of WO2014015337A2 publication Critical patent/WO2014015337A2/en
Publication of WO2014015337A3 publication Critical patent/WO2014015337A3/en

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    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
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    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Abstract

A Ill-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
PCT/US2013/051498 2012-07-20 2013-07-22 Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser WO2014015337A2 (en)

Applications Claiming Priority (16)

Application Number Priority Date Filing Date Title
US201261674003P 2012-07-20 2012-07-20
US201261674035P 2012-07-20 2012-07-20
US201261673966P 2012-07-20 2012-07-20
US201261673985P 2012-07-20 2012-07-20
US201261674012P 2012-07-20 2012-07-20
US201261673994P 2012-07-20 2012-07-20
US61/674,035 2012-07-20
US61/673,966 2012-07-20
US61/673,994 2012-07-20
US61/673,985 2012-07-20
US61/674,012 2012-07-20
US61/674,003 2012-07-20
US201261679553P 2012-08-03 2012-08-03
US61/679,553 2012-08-03
US201261707118P 2012-09-28 2012-09-28
US61/707,118 2012-09-28

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WO2014015337A2 WO2014015337A2 (en) 2014-01-23
WO2014015337A3 true WO2014015337A3 (en) 2015-07-16

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PCT/US2013/051498 WO2014015337A2 (en) 2012-07-20 2013-07-22 Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser

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US (2) US9136673B2 (en)
TW (1) TWI654810B (en)
WO (1) WO2014015337A2 (en)

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