WO2012107094A1 - Mems device comprising an under bump metallization - Google Patents
Mems device comprising an under bump metallization Download PDFInfo
- Publication number
- WO2012107094A1 WO2012107094A1 PCT/EP2011/051977 EP2011051977W WO2012107094A1 WO 2012107094 A1 WO2012107094 A1 WO 2012107094A1 EP 2011051977 W EP2011051977 W EP 2011051977W WO 2012107094 A1 WO2012107094 A1 WO 2012107094A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- ubm
- mems device
- shape
- corners
- mems
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0172—Seals
- B81C2203/019—Seals characterised by the material or arrangement of seals between parts
Definitions
- the present invention concerns a MEMS device that comprises an under bump metallization (UBM) .
- UBM under bump metallization
- the UBM is used to contact the device via flip-chip bonding with a substrate.
- the UBM is the top metal layer on the MEMS device which forms mechanically and electrically stable bonds with the solder bump.
- the MEMS device is a microphone
- a membrane is typically placed on the surface of the device.
- the membrane is placed directly above a back plate wherein the membrane and the back plate are the two electrodes of a capacitor.
- As much surface area as possible should be reserved for the membrane in order to improve the performance of the MEMS microphone.
- a certain area is required for the UBM to obtain a mechanically stable and reliable bond.
- a MEMS device according to claim 1 provides a solution for this object.
- the dependent claims disclose advantageous embodiments of the present invention.
- a MEMS device comprises an UBM to contact the device via flip-chip bonding with a substrate.
- the UBM is placed on the surface of the MEMS device and close to the corners of the surface.
- the shape of the UBM is adapted to the shape of the corners. Thereby, no surface space is wasted.
- a shape adapted to the corner is understood to be a shape different from a circle. Most preferred are shapes having two edges following a tangent of the circle that runs parallel to the edges of the surface forming the corner. But all shapes that cover an amount of area of the surface between a virtual circular UBM and the most preferred shape as defined above are allowed. Thereby the center of the adapted UBM is shifted nearer to the corner and some surface area adjoining the UBM most distant from the corner is saved without diminishing the UBM area with regard to a reference UBM of circular shape. Due to the usually fragile structure of MEMS devices it is advantageous to use laser dicing for the separation of such devices from a wafer where they have been produced.
- the optical properties of the laser beam require a rather larger clearance of metal around the dicing lane.
- This clearance defines a minimum distance between the UBM and the dicing lane.
- adapting the shape of the UBM to the shape of the corners of a device is advantageous also for the use of other dicing methods.
- the surface of the MEMS device can comprise an active area.
- the shape of the UBM can further be adapted not only to the shape of the corners, but also to the shape of the active area.
- the active area comprises a membrane placed on the surface of a MEMS microphone and directly above a counter electrode.
- the UBM is approximately triangularly shaped in order to fit into the corners of a rectangular surface.
- Specific embodiments of an approximately triangularly shaped UBM are UBMs with a shape of a triangular with rounded corners or UBM with the shape of an isosceles triangle.
- one side of the UBM is concave if further
- elements are placed on the surface of the device.
- An UBM with one concave side leaves more space in the middle of the device for the further elements.
- the UBM can follow the shape of the active part of the MEMS device with the minimum allowed design distance.
- UBM is provided on the surface of a MEMS device in order to allow contacting the MEMS device via flip-chip bonding to a substrate.
- another metal layer and/or a conducting layer is placed below the UBM.
- the conducting layer can comprise highly doped polysilicon layers.
- the term "UBM pad" refers to all metal layers, i.e. the UBM and underlying metal layers, plus other conducting layers. All layers of the UBM pad can obstruct a laser beam during dicing if arranged too close to the dicing line. Therefore, the same limitation as for the UBM are also valid for the UBM pad. In particular, a clearance of roughly 20% of the silicon wafer thickness is required between the UBM pad and the edge of the MEMS device.
- the UBM pad can have the same shape as the UBM or can overlap the UBM.
- the UBM pad is typically placed on the substrate close to the corners of the MEMS device.
- the shape of the UBM pad is adapted to the shape of the corners of the device.
- the shape of the UBM pad can be adapted not only to the shape of the corners and but also to the shape of the active area. Accordingly, the UBM pad can be approximately triangularly shaped and/or can comprise one concave side.
- the MEMS device can comprise four UBM and respectively four UBM pads and one of these UBM or UBM pads each is placed in each corner of the device. Each of these UBMs can be adapted to the respective corner.
- MEMS devices with other numbers of UBMs are possible as well.
- Figure 1 shows a section of a MEMS microphone wherein a
- FIG. 1 shows a section of a MEMS microphone comprising an UBM according to the present invention.
- Figure 3 shows a section of a MEMS microphone comprising an
- Figure 1 shows a section of a MEMS microphone as known in the prior art.
- the surface of the MEMS microphone comprises an active part 1 and a circular UBM 2.
- the active part comprises a membrane.
- the membrane is placed directly above a back plate.
- the back plate and the membrane are two electrodes and form a capacitor.
- the device detects acoustic waves and can be used as a microphone.
- the active part 1 can comprise further elements that are not shown in Figure 1.
- the UBM 2 Due to dicing restrains, the UBM 2 needs to have a minimum distance a to the edges 3 of the surface. Further, the UBM 2 needs to have a minimum distance b to the active part 1.
- the UBM 2 Due to its circular shape, the UBM 2 takes up a relatively large area of the MEMS microphone die. As the shape of the circular UBM 2 is not adjusted to the shape of the active part 1 or the shape of the corners, a lot of surface space is wasted and has to be left empty.
- Figure 2 shows a section of a surface of a MEMS microphone, wherein the UBM 4 has a shape that is adjusted to the corners and to the shape of the active part 1. Accordingly, the UBM 4 is approximately triangular.
- the virtual circular area of a known UBM 2 is depicted for reference only as a dotted line. It can be seen from Figure 2 that the size of the active part 1 can be increased while still providing a minimum distance b between the active part 1 and the UBM 4 and a minimum
- the MEMS microphone is made of a die.
- the shape of the UBM 4 is adjusted to the shape of the die.
- a die is rectangularly shaped. Accordingly, the UBM 4 can be
- the UBM 4 as shown in Figure 2 takes up the same area as the virtual circular UBM 2 being the same as the UBM 2 as shown in Figure 1 or can even be larger. Accordingly, the bonding is as stable as for a circular UBM 2.
- FIG. 3 shows the second embodiment of the UBM 4.
- the UBM 4 has a shape that is not only adjusted to the corners but further adjusted to the shape of the active part 1. Accordingly, the shape of the UBM 4 is concave so that the active part 1 and the UBM 4 are almost parallel to each other and have a constant distance of b along the dotted line between the points PI and P2. Between PI and P2, the UBM 4 follows the shape of the active part 1 of the MEMS device with the minimum allowed design distance b.
- an UBM pad comprises an UBM 2, 4, at least one underlying metal layer and/or at least one conducting layer.
- the UBM pad can have the same shape as the UBM 2, 4 or can overlap the UBM 2, 4.
- An UBM 4 or respectively an UBM pad according to the present invention allows to use more active surface area for the MEMS microphone while providing a stable bonding to a substrate. Therefore, an UBM 4 or respectively an UBM pad according to the present invention yields a better electro acoustical performance of the microphone.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE112011104873.4T DE112011104873B4 (en) | 2011-02-10 | 2011-02-10 | MEMS device comprising an under bump metallization |
JP2013552852A JP5797779B2 (en) | 2011-02-10 | 2011-02-10 | MEMS devices including underbump metallization |
US13/983,947 US9369066B2 (en) | 2011-02-10 | 2011-02-10 | MEMS device comprising an under bump metallization |
PCT/EP2011/051977 WO2012107094A1 (en) | 2011-02-10 | 2011-02-10 | Mems device comprising an under bump metallization |
CN201180067186.7A CN103384639B (en) | 2011-02-10 | 2011-02-10 | Mems device comprising an under bump metallization |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2011/051977 WO2012107094A1 (en) | 2011-02-10 | 2011-02-10 | Mems device comprising an under bump metallization |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012107094A1 true WO2012107094A1 (en) | 2012-08-16 |
Family
ID=44625093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2011/051977 WO2012107094A1 (en) | 2011-02-10 | 2011-02-10 | Mems device comprising an under bump metallization |
Country Status (5)
Country | Link |
---|---|
US (1) | US9369066B2 (en) |
JP (1) | JP5797779B2 (en) |
CN (1) | CN103384639B (en) |
DE (1) | DE112011104873B4 (en) |
WO (1) | WO2012107094A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10522674B2 (en) * | 2016-05-18 | 2019-12-31 | Rohm Co., Ltd. | Semiconductor with unified transistor structure and voltage regulator diode |
Citations (8)
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US6404064B1 (en) * | 2000-07-17 | 2002-06-11 | Siliconware Precision Industries Co., Ltd. | Flip-chip bonding structure on substrate for flip-chip package application |
EP1431242A2 (en) * | 2002-11-14 | 2004-06-23 | Samsung Electronics Co., Ltd. | Bonding method for flip-chip semiconductor device, mems device package and package method using the same |
US20040166662A1 (en) * | 2003-02-21 | 2004-08-26 | Aptos Corporation | MEMS wafer level chip scale package |
US20040232533A1 (en) * | 2003-05-21 | 2004-11-25 | Olympus Corporation | Semiconductor apparatus and fabricating method for the same |
US20070048905A1 (en) * | 2005-08-30 | 2007-03-01 | Commissariat A L'energie Atomique | Method for encapsulating a component, especially an electric or electronic component, by means of an improved solder seam |
US20070164445A1 (en) * | 2006-01-13 | 2007-07-19 | Nec Electronics Corporation | Substrate and semiconductor device |
US20090065933A1 (en) * | 2007-09-07 | 2009-03-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US20100276766A1 (en) * | 2009-04-29 | 2010-11-04 | Jinbang Tang | Shielding for a micro electro-mechanical device and method therefor |
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CN1185707C (en) * | 2002-06-17 | 2005-01-19 | 威盛电子股份有限公司 | Bottom buffering metal lug structure |
AT412190B (en) | 2002-10-25 | 2004-11-25 | Fries Planung & Marketing | STACKABLE DISH BASKET FOR DISHWASHERS |
US7600999B2 (en) | 2003-02-26 | 2009-10-13 | Align Technology, Inc. | Systems and methods for fabricating a dental template |
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JP2005238540A (en) * | 2004-02-25 | 2005-09-08 | Sony Corp | Fluid driving device, manufacturing method for fluid driving device, electrostatically driven fluid discharging apparatus, and manufacturing method for electrostatically driven fluid discharging apparatus |
US7442040B2 (en) | 2005-01-13 | 2008-10-28 | Align Technology, Inc. | Template for veneer application |
US8043092B2 (en) | 2005-04-01 | 2011-10-25 | Mary Sue Stonisch | Demonstration dental template and matching temporary overlay |
FR2890067B1 (en) * | 2005-08-30 | 2007-09-21 | Commissariat Energie Atomique | METHOD FOR SEALING OR SOLDING TWO ELEMENTS BETWEEN THEM |
JP4548288B2 (en) * | 2005-09-22 | 2010-09-22 | セイコーエプソン株式会社 | Tunable filter |
ATE471635T1 (en) * | 2006-03-30 | 2010-07-15 | Sonion Mems As | SINGLE-CHIP ACOUSTIC MEMS TRANSDUCER AND MANUFACTURING METHOD |
US8401686B2 (en) | 2008-12-18 | 2013-03-19 | Align Technology, Inc. | Reduced registration bonding template |
US8235715B2 (en) | 2008-12-18 | 2012-08-07 | Align Technology, Inc. | UV and chemical cure blocking dental template |
JP5321111B2 (en) * | 2009-02-13 | 2013-10-23 | 船井電機株式会社 | Microphone unit |
-
2011
- 2011-02-10 WO PCT/EP2011/051977 patent/WO2012107094A1/en active Application Filing
- 2011-02-10 DE DE112011104873.4T patent/DE112011104873B4/en active Active
- 2011-02-10 CN CN201180067186.7A patent/CN103384639B/en not_active Expired - Fee Related
- 2011-02-10 JP JP2013552852A patent/JP5797779B2/en not_active Expired - Fee Related
- 2011-02-10 US US13/983,947 patent/US9369066B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US6404064B1 (en) * | 2000-07-17 | 2002-06-11 | Siliconware Precision Industries Co., Ltd. | Flip-chip bonding structure on substrate for flip-chip package application |
EP1431242A2 (en) * | 2002-11-14 | 2004-06-23 | Samsung Electronics Co., Ltd. | Bonding method for flip-chip semiconductor device, mems device package and package method using the same |
US20040166662A1 (en) * | 2003-02-21 | 2004-08-26 | Aptos Corporation | MEMS wafer level chip scale package |
US20040232533A1 (en) * | 2003-05-21 | 2004-11-25 | Olympus Corporation | Semiconductor apparatus and fabricating method for the same |
US20070048905A1 (en) * | 2005-08-30 | 2007-03-01 | Commissariat A L'energie Atomique | Method for encapsulating a component, especially an electric or electronic component, by means of an improved solder seam |
US20070164445A1 (en) * | 2006-01-13 | 2007-07-19 | Nec Electronics Corporation | Substrate and semiconductor device |
US20090065933A1 (en) * | 2007-09-07 | 2009-03-12 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of manufacturing the same |
US20100276766A1 (en) * | 2009-04-29 | 2010-11-04 | Jinbang Tang | Shielding for a micro electro-mechanical device and method therefor |
Also Published As
Publication number | Publication date |
---|---|
CN103384639A (en) | 2013-11-06 |
JP5797779B2 (en) | 2015-10-21 |
US9369066B2 (en) | 2016-06-14 |
US20140035434A1 (en) | 2014-02-06 |
DE112011104873B4 (en) | 2019-05-29 |
DE112011104873T5 (en) | 2013-11-07 |
JP2014507297A (en) | 2014-03-27 |
CN103384639B (en) | 2017-05-10 |
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