WO2005082010A3 - Methods for polarization control for vcsels - Google Patents

Methods for polarization control for vcsels Download PDF

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Publication number
WO2005082010A3
WO2005082010A3 PCT/US2005/005894 US2005005894W WO2005082010A3 WO 2005082010 A3 WO2005082010 A3 WO 2005082010A3 US 2005005894 W US2005005894 W US 2005005894W WO 2005082010 A3 WO2005082010 A3 WO 2005082010A3
Authority
WO
WIPO (PCT)
Prior art keywords
vcsel
polarization control
elements
vcsels
methods
Prior art date
Application number
PCT/US2005/005894
Other languages
French (fr)
Other versions
WO2005082010A2 (en
Inventor
Jin Kim
Original Assignee
Finisar Corp
Jin Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Finisar Corp, Jin Kim filed Critical Finisar Corp
Priority to EP05723667A priority Critical patent/EP1719220A4/en
Priority to CA002556709A priority patent/CA2556709A1/en
Publication of WO2005082010A2 publication Critical patent/WO2005082010A2/en
Publication of WO2005082010A3 publication Critical patent/WO2005082010A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18338—Non-circular shape of the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18363—Structure of the reflectors, e.g. hybrid mirrors comprising air layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H01S5/18372—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials by native oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution

Abstract

A vertical cavity surface emitting laser (VCSEL) (40) having strain or stress elements (41) added for stable polarization control. The elements may disturb the symmetrical stress of the VCSEL structure to induce stable polarization control of its output. Such elements may be attached to the top surface or the sides of the VCSEL (40), or may be inserted in some of the layers of the VCSEL (40) structure. Some elements may involve the removal of material from the sides of the VCSEL (40).
PCT/US2005/005894 2004-02-25 2005-02-25 Methods for polarization control for vcsels WO2005082010A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP05723667A EP1719220A4 (en) 2004-02-25 2005-02-25 Methods for polarization control for vcsels
CA002556709A CA2556709A1 (en) 2004-02-25 2005-02-25 Methods for polarization control for vcsels

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US78620304A 2004-02-25 2004-02-25
US10/786,203 2004-02-25

Publications (2)

Publication Number Publication Date
WO2005082010A2 WO2005082010A2 (en) 2005-09-09
WO2005082010A3 true WO2005082010A3 (en) 2006-01-26

Family

ID=34911289

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/005894 WO2005082010A2 (en) 2004-02-25 2005-02-25 Methods for polarization control for vcsels

Country Status (3)

Country Link
EP (1) EP1719220A4 (en)
CA (1) CA2556709A1 (en)
WO (1) WO2005082010A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103414105A (en) * 2013-07-13 2013-11-27 北京工业大学 Perpendicular cavity surface emitting laser device stable in single transverse mode polarization

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5532321B2 (en) * 2009-11-17 2014-06-25 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
JP5527714B2 (en) * 2009-11-18 2014-06-25 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
JP5532239B2 (en) * 2009-11-26 2014-06-25 株式会社リコー Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
CN102447220A (en) * 2010-09-30 2012-05-09 新科实业有限公司 Surface luminescent semiconductor laser and manufacturing method thereof
JP5874227B2 (en) * 2011-07-22 2016-03-02 富士ゼロックス株式会社 Surface emitting semiconductor laser array, surface emitting semiconductor laser device, optical transmission device, and information processing device
JP2015119140A (en) * 2013-12-20 2015-06-25 セイコーエプソン株式会社 Surface-emitting laser and atomic oscillator
JP6274404B2 (en) * 2013-12-20 2018-02-07 セイコーエプソン株式会社 Surface emitting laser and atomic oscillator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331654A (en) * 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US6002705A (en) * 1997-12-03 1999-12-14 Xerox Corporation Wavelength and polarization multiplexed vertical cavity surface emitting lasers
US6751242B2 (en) * 1999-12-28 2004-06-15 Seiko Epson Corporation Surface emitting semiconductor laser and surface emitting semiconductor laser array

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3482824B2 (en) * 1997-07-29 2004-01-06 セイコーエプソン株式会社 Surface emitting semiconductor laser and surface emitting semiconductor laser array
JP3606059B2 (en) * 1998-03-11 2005-01-05 セイコーエプソン株式会社 Surface emitting semiconductor laser and manufacturing method thereof
JP2000353858A (en) * 1999-06-14 2000-12-19 Nippon Telegr & Teleph Corp <Ntt> Surface-emitting laser and manufacture thereof
EP1104056A1 (en) * 1999-11-18 2001-05-30 Avalon Photonics Ltd A polarization controlled vertical-cavity surface-emitting laser

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331654A (en) * 1993-03-05 1994-07-19 Photonics Research Incorporated Polarized surface-emitting laser
US6002705A (en) * 1997-12-03 1999-12-14 Xerox Corporation Wavelength and polarization multiplexed vertical cavity surface emitting lasers
US6751242B2 (en) * 1999-12-28 2004-06-15 Seiko Epson Corporation Surface emitting semiconductor laser and surface emitting semiconductor laser array

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1719220A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103414105A (en) * 2013-07-13 2013-11-27 北京工业大学 Perpendicular cavity surface emitting laser device stable in single transverse mode polarization

Also Published As

Publication number Publication date
EP1719220A2 (en) 2006-11-08
EP1719220A4 (en) 2008-08-06
WO2005082010A2 (en) 2005-09-09
CA2556709A1 (en) 2005-09-09

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