A method is used to form a self-aligning thin film transistor. The thin film transistor includes a gate contact formed with a state-switchable material, and a dielectric layer to isolate the gate contact. A source-drain layer, which includes a source contact, and a drain contact are formed with a source-drain...http://www.google.com.au/patents/US8110450?utm_source=gb-gplus-sharePatent US8110450 - Printed TFT and TFT array with self-aligned gate