A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent...http://www.google.com.au/patents/US6660663?utm_source=gb-gplus-sharePatent US6660663 - Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compounds
Computer readable medium for holding a program for performing plasma ...