Method of inducing stresses in the channel region of a transistor

Form Pad-Oxide

t

Form Etch Stop Layer

1

Form Shallow Trench Isolation Structures

Form Tensile
Materials in STIs

Anneal Materials

t

Polish Materials

Fig. 3

Form Shallow Trench Isolation Structures

I

Form Tensile
Materials in STIs

I

Planarize Substrate

Form Transistor
Structure

Form Nitride Layer

t

Form Dielectric Layer

Fig. 4