A method is provided for forming a copper interconnect, the method including forming a sacrificial dielectric layer above a structure layer, forming an opening in the sacrificial dielectric layer and forming a copper layer above the sacrificial dielectric layer and in the opening. The method also includes...http://www.google.com.au/patents/US6756297?utm_source=gb-gplus-sharePatent US6756297 - Method of fabricating copper-based semiconductor devices using a sacrificial dielectric layer
Method of fabricating copper-based semiconductor devices using a sacrificial ...
