US 20060030164A1
(19) United States
(12) Patent Application Publication (io) Pub. No.: US 2006/0030164 Al
Im (43) Pub. Date: Feb. 9,2006
(51) Int. CI.
H01L 21/20
H01L 21/84
H01L 21/324
H01L 21/26
(52) U.S. CI
Correspondence Address:
BAKER & BOTTS
30 ROCKEFELLER PLAZA
NEW YORK, NY 10112
(21) Appl. No.: 10/525,297
(22) PCT Filed: Aug. 19, 2003 (86) PCT No.: PCT/US03/25954
Related U.S. Application Data
(60) Provisional application No. 60/405,085, filed on Aug. 19, 2002.
(2006.01)
(2006.01)
(2006.01)
(2006.01)
438/795; 438/799; 438/487;
438/166
(57) ABSTRACT
A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at least one masked beam pulse, which is used to irradiate at least one portion of the thin film sample. With the at least one masked beam pulse, the portion of the film sample is irradiated with sufficient intensity for such portion to later crystallize. This portion of the film sample is allowed to crystallize so as to be composed of a first area and a second area. Upon the crystallization thereof, the first area includes a first set of grains, and the second area includes a second set of grains whose at least one characteristic is different from at least one characteristic of the second set of grains. The first area surrounds the second area, and is configured to allow an active region of a thin-film transistor ("TFT") to be provided at a distance therefrom.
