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US007508065B2
(12) United States Patent
Sherrer et al.
(io) Patent No.: (45) Date of Patent:
US 7,508,065 B2 Mar. 24, 2009
(54) DEVICE PACKAGE AND METHODS FOR THE FABRICATION AND TESTING THEREOF
(75) Inventors: David W. Sherrer, Radford, VA (US);
Larry J. Rasnake, Blacksburg, VA (US); John J. Fisher, Blacksburg, VA (US)
(73) Assignee: Nuvotronics, LLC, Blacksburg, VA (US)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 0 days.
(21) Appl.No.: 11/590,629
(22) Filed: Oct. 31, 2006
(65) Prior Publication Data
US 2007/0072321 Al Mar. 29, 2007
Related U.S. Application Data
(62) Division of application No. 10/941,667, filed on Sep. 15, 2004, now Pat. No. 7,129,163.
(60) Provisional application No. 60/502,868, filed on Sep. 15, 2003.
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Provided are methods of forming sealed via structures. One method involves: (a) providing a semiconductor substrate having a first surface and a second surface opposite the first surface; (b) forming a layer on the first surface of the substrate; (c) etching a via hole through the substrate from the second surface to the layer, the via hole having a first perimeter at the first surface; (d) forming an aperture in the layer, wherein the aperture has a second perimeter within the first perimeter; and (e) providing a conductive structure for sealing the via structure. Also provided are sealed via structures, methods of detecting leakage in a sealed device package, sealed device packages, device packages having cooling structures, and methods of bonding a first component to a second component.
18 Claims, 26 Drawing Sheets
U.S. PATENT DOCUMENTS
6,167,751 Bl* 1/2001 Fraimetal 73/49.3
6,228,675 Bl 5/2001 Rubyetal.
6,275,513 Bl 8/2001 Chang-Hasnain et al.
6,439,032 Bl * 8/2002 Lehmann 73/49.3
6,818,464 B2 11/2004 Heschel
6,843,107 B2* 1/2005 Newman et al 73/49.3
2003/0081914 Al 5/2003 Steinberg et al.
FOREIGN PATENT DOCUMENTS
EP 1 002 612 Al 5/2000
EP 1 333 267 Al 8/2003
WO WO 2004/025239 A2 3/2004
OTHER PUBLICATIONS
Lee et al., "Advances in Bonding Technology for Electronic Packaging", Journal of Electronic Packaging, vol. 115, Jun. 1993, pp. 201207.
Lee et al., "High Temperature Tin-Copper Joints Produced at Low Process Temperature for Stress Reduction", Thin Solid Films 286 (1996), pp. 213-218.
Lee et al., "Au-In Bonding Below the Eutectic Temperature", IEEE Transactions on Components, Hybrids and Manufacturing Technology, vol. 16, No. 3, May 1993, pp. 311-316.
* cited by examiner
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