SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

US 20090261372A1

(io) Pub. No.: US 2009/0261372 Al (43) Pub. Date: Oct. 22, 2009

(54) SEMICONDUCTOR LIGHT EMITTING

DEVICE AND METHOD FOR FABRICATING
THE SAME

(75) Inventor: Tetsuzo UEDA, Osaka (JP)

Correspondence Address:
GREENBLUM & BERNSTEIN, P.L.C.
1950 ROLAND CLARKE PLACE
RESTON, VA 20191 (US)

(73) Assignee: PANASONIC CORPORATION,

Osaka (JP)

(21) Appl.No.: 12/490,200

(22) Filed: Jun. 23, 2009

Related U.S. Application Data

(62) Division of application No. 11/060,425, filed on Feb. 18, 2005, now Pat. No. 7,569,863.

(30) Foreign Application Priority Data

Feb. 19, 2004 (JP) 2004-042329

Feb. 19, 2004 (JP) 2004-042330

Publication Classification

(51) Int. CI.

H01L 33/00 (2006.01)

(52) U.S. CI 257/98; 257/E33.061

(57) ABSTRACT

A semiconductor light emitting device is composed of a blue light emitting diode, a red light emitting layer grown epitaxially on the blue light emitting diode, and an insulating material containing a YAG fluorescent material. The red light emitting layer is made of, e.g., undoped In0 4Ga0 6N having a forbidden band width of 1.9 eV and formed on a p-type semiconductor layer to have a configuration consisting of a plurality of mutually spaced-apart islands.