US 7,217,952 B2 May 15, 2007
(54) METHOD OF MANUFACTURING A
SEMICONDUCTOR DEVICE AND
SEMICONDUCTOR MANUFACTURING
APPARATUS
(75) Inventors: Setsuo Nakajima, Atsugi (JP); Aiko
Shiga, Atsugi (JP); Naoki Makita,
Osaka (JP); Takuya Matsuo, Osaka
(JP)
(73) Assignees: Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP); Sharp Kabushiki Kaisha, Osaka (JP)
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 122 days.
(21) Appl. No.: 11/221,773
(22) Filed: Sep. 9, 2005
(65) Prior Publication Data
US 2006/0009015 Al Jan. 12, 2006
Related U.S. Application Data
(62) Division of application No. 10/133,588, filed on Apr. 29, 2002.
(30) Foreign Application Priority Data
May 18, 2001 (JP) 2001-148635
A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.
8 Claims, 22 Drawing Sheets
(2 of 22 Drawing Sheet(s) Filed in Color)
