United States Patent [w]
Shimada et al.
US005953084A [ii] Patent Number: [45] Date of Patent:
[54] TRANSMISSION TYPE LIQUID CRYSTAL DISPLAY DEVICE HAVING CAPACITANCE RATIO OF 10% OR LESS AND CHARGING RATE DIFFERENCE OF 0.6% OR LESS
[75] Inventors: Takayuki Shimada, Yamatokoriyama;
Masaru Kajitani, Osaka; Masaya Okamoto, Soraku-gun; Naofumi Kondo; Mikio Katayama, both of Ikoma; Yoshikazu Sakuhana, Yamatokoriyama; Akihiro Yamamoto, Tenri; Yukinobu Nakata, Tenri; Hirohiko Nishiki, Tenri; Yoshinori Shimada, Yamatokoriyama, all of Japan
[73] Assignee: Sharp Kabushiki Kaisha, Osaka, Japan
[21] Appl. No.: 09/110,151 [22] Filed: Jul. 6, 1998
Related U.S. Application Data
[63] Continuation of application No. 08/695,632, Aug. 12, 1996.
[30] Foreign Application Priority Data
Aug. 11, 1995 [JP] Japan 7-206367
Sep. 29, 1995 [JP] Japan 7-254043
[51] Int. CI.6 G02F 1/1343; G02F 1/136
[52] U.S. CI 349/38; 349/39; 349/42
[58] Field of Search 349/38, 39, 42
[56] References Cited
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OTHER PUBLICATIONS
Patent Abstracts of Japan, vol. 016, No. 218, May 21, 1992 & JP-A-04 042214, Feb. 12, 1992.
"Application of a Wide Viewig Angle Technique Essential for a Large-Area Display to Mass Production Panel of TFT Starts", Flat-Panel Display '94, p. 166, Dec. 10, 1993. "Mass Production of CMP is Full-Fledged to be Applied to ASIC and DRAM", Nikkei Microdevices, pp. 50-57, 1994. "Backlight", Flat-Panel Display '94, p. 217, Dec. 10, 1993.
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Primary Examiner—-William L. Sikes Assistant Examiner—Tarifur R. Chowdhury Attorney, Agent, or Firm—Nixon & Vanderhye PC.
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The transmission type liquid crystal display device of this invention includes: gate lines; source lines; and switching elements each arranged near a crossing of each gate line and each source line, a gate electrode of each switching element being connected to the gate line, a source electrode of the switching element being connected to the source line, and a drain electrode of the switching element being connected to a pixel electrode for applying a voltage to a liquid crystal layer, wherein an interlayer insulating film formed of an organic film with high transparency is provided above the switching element, the gate line, and the source line, and wherein the pixel electrode formed of a transparent conductive film is provided on the interlayer insulating film.
22 Claims, 13 Drawing Sheets
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FOREIGN PATENT DOCUMENTS
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4-74714 11/1992 Japan .
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OTHER PUBLICATIONS
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Sakamoto et al "27.3: A High-Aperture-Ratio 3-in.-Diagonal VGA a-Si Light Valve with Pixel/Data and Pixel/Gates Lines Overlapping", SID 96 Digest, pp. 681-684, 1996. Kim et al "4:3: High-Aperture and Fault-Tolerant Pixel Structures for TFT-LCDs", SID 95 Digest, pp. 15-18,1995. Patent Abstracts of Japan, vol. 017, No. 428 (P-1588), Aug. 9, 1993 & JP-A-05 088199 (Sanyo Electric Co. Ltd.), Apr. 9, 1993.
Patent Abstracts of Japan, vol. 018, No. 532 (P-1810), Oct. 7, 1994 & JP-A-06 186580 (Seiko Epson Corp.), Jul. 8, 1994.
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