Inventors: Eugene Chen. Gilbert; Saied N.
Tehrani: Herbert Goronkin. both of
Tempe. all of Ariz.
 Assignee: Motorola. Schaumburg, 111.
 Appl. No.: 674^87
 Filed: Jul. 2, 1996
 Int. CI.6 G11C 11/00
 U.S. CI 365/158; 365/171; 365/97
 Field of Search 365/171. 97, 158;
 References Cited
U.S. PATENT DOCUMENTS
Primary Examiner—David C. Nelms
Assistant Examiner—Hoai V. Ho
Attorney, Agent, or Firm—Eugene A. Parsons
A magnetic random access memory (MRAM) cell structure
(10) with a portion of giant magnetoresistive (GMR) material (11), around which single or multiple word line (12) is wound, is provided. Magnetic field generated by word current (13, 14) superimposed in portion of GMR material
(11) so that a total strength of magnetic field increases proportionally. The same word current is passed through the portion of GMR material (11) multiple times, thus producing equivalent word field by many times as large word current in a conventional MRAM cell.