Selective etching of MEMS using gaseous halides and reactive co-etchants

Position ‘t/bias Vbias ; AV 7| AV AV [ AV g; : i i : i::._i:::.. +1: Voltage -10 -5 0 5 10 Stability E Stability I Actuated WI-ndow Relaxed 5 Wmdow Actuated FIG. 3 Column Output Signals + Vbias ‘t/bias Stable Stable Row Output Signals

+AV Re/ax Actuate

FIG. 4

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A

A II

FIG. 6B

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FIG. 7C

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FIG. 7D