In a thin film transistor (TFT) structure, formation of a spacer layer is used for isolating the NI junction from an insulating layer comprising a nitride, so as to decrease the amount of current leakage and improve the electric characteristics of TFT. In a back-channel etching (BCE) type TFT device,...http://www.google.com.au/patents/US7652285?utm_source=gb-gplus-sharePatent US7652285 - Thin film transistor structure and method of fabricating the same
