A HIGFET (10) utilizes an etch stop layer (17) to form a gate insulator (16) to be narrower than the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current...http://www.google.com.au/patents/US5614739?utm_source=gb-gplus-sharePatent US5614739 - HIGFET and method
