A semiconductor device is prepared by the use of a vapor phase method and is provided with a semiconductor layer composed of boron phosphide (BP) having a band gap at room temperature of not less than 2.8 eV and not more than 3.4 eV or a boron phosphide (BP)-base mixed crystal which contains the boron...http://www.google.com.au/patents/US7315050?utm_source=gb-gplus-sharePatent US7315050 - Semiconductor device, semiconductor layer and production method thereof
