The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed...http://www.google.com.au/patents/US6858523?utm_source=gb-gplus-sharePatent US6858523 - Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride
