Embodiments of the invention provide memory devices and methods for forming such memory devices. In one embodiment, a method for fabricating a non-volatile memory device on a substrate is provided which includes depositing a first polysilicon layer on a substrate surface, depositing a silicon oxide layer...http://www.google.com.au/patents/US8043907?utm_source=gb-gplus-sharePatent US8043907 - Atomic layer deposition processes for non-volatile memory devices
