In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the...http://www.google.com.au/patents/US8003989?utm_source=gb-gplus-sharePatent US8003989 - Thin film semiconductor device having a terminal portion
