A method of manufacturing a copper metal wiring in a semiconductor device, by which a plasma process is performed before a diffusion barrier layer is formed and a chemical pre-process using a chemical enhancer is performed so that copper is deposited to form a metal wiring by a chemically enhanced chemical...http://www.google.com.au/patents/US6645858?utm_source=gb-gplus-sharePatent US6645858 - Method of catalyzing copper deposition in a damascene structure by plasma treating the barrier layer and then applying a catalyst such as iodine or iodine compounds to the barrier layer
