A method of fabricating a gate structure of a field effect transistor comprising a gate dielectric that is notched beneath a gate electrode using an isotropic plasma etch process. In one embodiment, the etch process uses a gas comprising a halogen gas (e.g., chlorine (Cl2)), a hydrocarbon gas (e.g.,...http://www.google.com.au/patents/US20050176191?utm_source=gb-gplus-sharePatent US20050176191 - Method for fabricating a notched gate structure of a field effect transistor
