A gate insulation film is formed on semiconductor substrate, a gate electrodes are formed on the gate insulation film, and source/drain diffusion layers are formed. Silicon nitride films are formed on a side wall of the gate electrodes, a silicon oxide film is formed on the overall surface, and the silicon...http://www.google.com.au/patents/US6608356?utm_source=gb-gplus-sharePatent US6608356 - Semiconductor device using damascene technique and manufacturing method therefor
