The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer,...http://www.google.com.au/patents/US5572071?utm_source=gb-gplus-sharePatent US5572071 - Semiconductor device having a multi-layer metallization structure
