The present invention relates to a semiconductor device which comprises: an n.sup.- type buried collector provided on an n type silicon epitaxial layer disposed in an emitter opening; an n.sup.- type silicon collector disposed on said collector; a p.sup.+ type single crystal silicon intrinsic base...http://www.google.com.au/patents/US5321301?utm_source=gb-gplus-sharePatent US5321301 - Semiconductor device
