The present invention includes a method of forming semiconductor oxide layers and, in particular, gate oxide layers, in MOS semiconductor devices formed on silicon substrates. The method includes the steps of forming a first silicon oxide sublayer on the silicon substrate in an atmosphere including primarily...http://www.google.com.au/patents/US5393683?utm_source=gb-gplus-sharePatent US5393683 - Method of making semiconductor devices having two-layer gate structure
