A magneto-resistive random access memory (MRAM) stably read data stored in an MRAM cell in a magnetization direction of a variable magnetic layer of an MTJ element. The MRAM includes a first current sinking circuit to convert a current flowing to a sense amplifier node through a current path comprised...http://www.google.com.au/patents/US7016220?utm_source=gb-gplus-sharePatent US7016220 - Magneto-resistive random access memory
