An IR LED array and method of fabrication having a GaAs wafer with one surface metallized to form a common LED contact. Epitaxially formed on this wafer is a GaAs/GaAlAs heterostructure with successive layers of Ga.sub.1-x Al.sub.x As-n, GaAs-p, and Ga.sub.1-y Al.sub.y As-p on the other surface, followed...http://www.google.com.au/patents/US4707716?utm_source=gb-gplus-sharePatent US4707716 - High resolution, high efficiency I.R. LED printing array and fabrication method
