The process of the present invention forms copper interconnects in a semiconductor wafer surface. During the process, initially, narrow and large features are provided in the top surface of the wafer, and then a primary copper layer is deposited by employing an electrochemical deposition process. The...http://www.google.com.au/patents/US20060009033?utm_source=gb-gplus-sharePatent US20060009033 - Defect-free thin and planar film processing
