A semiconductor integrated circuit device having a switching MISFET, and a capacitor element formed over the semiconductor substrate, is disclosed. The impurity concentration of the semiconductor region of the switching MISFET to which the capacitor element is connected is less than the impurity concentration...http://www.google.com.au/patents/US5504029?utm_source=gb-gplus-sharePatent US5504029 - Method of producing semiconductor integrated circuit device having memory cell and peripheral circuit MISFETs
