In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed by a method of...http://www.google.com.au/patents/US6468845?utm_source=gb-gplus-sharePatent US6468845 - Semiconductor apparatus having conductive thin films and manufacturing apparatus therefor
