A two terminal, silicon based negative differential resistance (NDR) element is disclosed, to effectuate of NDR diode for selected applications. The two terminal device is based on a three terminal NDR-capable FET which has a modified channel doping profile, and in which the gate is tied to the drain....http://www.google.com.au/patents/US6990016?utm_source=gb-gplus-sharePatent US6990016 - Method of making memory cell utilizing negative differential resistance devices
