A ballistic semiconductor device of the present invention comprises a n-type emitter layer (102), a base layer (305) made of n-type InGaN, a n-type collector layer (307), an emitter barrier layer (103) interposed between the emitter layer (102) and the base layer (305) and having a band gap larger than...http://www.google.com.au/patents/US20060231862?utm_source=gb-gplus-sharePatent US20060231862 - Ballistic semiconductor device
