A method of forming a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; depositing a catalyst metal on the amorphous silicon layer; disposing first and second electrodes contacting the amorphous silicon layer along a first direction; heating the amorphous silicon...http://www.google.com.au/patents/US6849525?utm_source=gb-gplus-sharePatent US6849525 - Methods for forming polycrystalline silicon layer and fabricating polycrystalline silicon thin film transistor
