A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the...http://www.google.com.au/patents/US7144490?utm_source=gb-gplus-sharePatent US7144490 - Method for selective electroplating of semiconductor device I/O pads using a titanium-tungsten seed layer
