To provide a method for fabricating a nonvolatile semiconductor memory device in which the occurrence of a trap site formed in a tunnel oxide film can be suppressed so that W/E cycle of a memory cell transistor can be improved. A tunnel oxide film formed between a floating gate 13 and a control gate...http://www.google.com.au/patents/US6479349?utm_source=gb-gplus-sharePatent US6479349 - Laser transceiver system controller
