The invention encompasses a method of forming a protective segment of material. A plurality of at least three conductive lines are provided over a semiconductor substrate. A material is formed over the conductive lines, and a patterned masking layer is formed to cover a segment of the material extending...http://www.google.com.au/patents/US6653241?utm_source=gb-gplus-sharePatent US6653241 - Methods of forming protective segments of material, and etch stops
