A semiconductor device is described, incorporating electron traps at the interface between a semiconductor substrate and a gate dielectric layer of an insulated gate field effect transistor, such device being capable of retaining charge in the electron traps for a certain time, allowing volatile memory...http://www.google.com.au/patents/US5633178?utm_source=gb-gplus-sharePatent US5633178 - Method of making volatile memory cell with interface charge traps
