To form a plurality of patterned conductor leads in the same layer of an integrated circuit, an insulating film is etched to form a plurality of patterned grooves by plasma etching using an etching gas containing carbon and fluorine to which an additive gas containing carbon is added. The etching rate...http://www.google.com.au/patents/US5892286?utm_source=gb-gplus-sharePatent US5892286 - Semiconductor device and manufacturing method thereof
