A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers adjacent a substrate. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at...http://www.google.com.au/patents/US7446002?utm_source=gb-gplus-sharePatent US7446002 - Method for making a semiconductor device comprising a superlattice dielectric interface layer
