A method of cleaning a metal oxide thin film on a silicon wafer, includes dipping the wafer in an organic solvent; drying the wafer in a nitrogen atmosphere; and stripping any photoresist from the wafer in an oxygen atmosphere under partial vacuum at a temperature of about 200 C. The wafer may also be...http://www.google.com.au/patents/US6457479?utm_source=gb-gplus-sharePatent US6457479 - Method of metal oxide thin film cleaning
