A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized...http://www.google.com.au/patents/US5663077?utm_source=gb-gplus-sharePatent US5663077 - Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
