This invention is a hardware modification which permits greater uniformity of etching to be achieved in a high-density-source plasma reactor (i.e., one which uses a remote source to generate a plasma, and which also uses high-frequency bias power on the wafer chuck). The invention addresses the uniformity...http://www.google.com.au/patents/US6500300?utm_source=gb-gplus-sharePatent US6500300 - Plasma reactor
