A method for the manufacture of gallium arsenide thin film solar cells on inexpensive substrate material whereby an intermediate layer of highly doped, amorphous germanium is employed in order to promote the growth of the gallium arsenide layers. A high-energy radiation is directed to specific, prescribed...http://www.google.com.au/patents/US4657603?utm_source=gb-gplus-sharePatent US4657603 - Method for the manufacture of gallium arsenide thin film solar cells
