A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind...http://www.google.com.au/patents/US6323133?utm_source=gb-gplus-sharePatent US6323133 - Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor
