A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and...http://www.google.com.au/patents/US6057251?utm_source=gb-gplus-sharePatent US6057251 - Method for forming interlevel dielectric layer in semiconductor device using electron beams
