A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the capacitor dielectric is deposited thereover. A first metal layer, such as titanium...http://www.google.com.au/patents/US5130267?utm_source=gb-gplus-sharePatent US5130267 - Split metal plate capacitor and method for making the same
