A method of forming a resist pattern comprises the following steps. A resist is applied on a wafer for subsequent baking the same. Subsequently, the resist-applied wafer is then stored in an atmosphere maintained at a humidity of not less than 80% until the resist-applied wafer is placed in an exposure...http://www.google.com.au/patents/US5994036?utm_source=gb-gplus-sharePatent US5994036 - Method of forming a resist pattern
