Large capacitance, low-impedance decoupling capacitors in SOI and their method of fabrication. A high conductivity trench substrate contact is made adjacent to the capacitor by removal of insulator lining the capacitor by use of an extra mask thereby making a substrate contact when the...http://www.google.com.au/patents/US5759907?utm_source=gb-gplus-sharePatent US5759907 - Method of making large value capacitor for SOI
