A method or growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate...http://www.google.com.au/patents/US5431738?utm_source=gb-gplus-sharePatent US5431738 - Apparatus for growing group II-VI mixed compound semiconductor
